>MadeOfAtoms: Update density and thermal expansion

2024-02-23T07:40:52Z

Update density and thermal expansion

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{{Infobox element
|name =silicon
|symbol =Si
|Z =14
|number =14
|appearance=crystalline, reflective with bluish-tinged faces
|image name=SiliconCroda.jpg
|abundance=
|abundance in earth's crust=
|abundance in oceans=
|abundance in solar system=
|left=[[aluminium]]
|right=[[phosphorus]]
|above=[[carbon|C]]
|below=[[germanium|Ge]]
|electrons per shell=2, 8, 4
|phase=
|phase comment=
|density=2.329085 g/cm<sup>3</sup><ref name="Arblaster 2018" />
|density conditions=(at 20° C)
|density gplstp=
|density gpcm3nrt=
|density gpcm3nrt 2=
|density gpcm3mp=2.57
|melting point K=1687
|melting point C=1414
|melting point F=2577
|boiling point K=3538
|boiling point C=3265
|boiling point F=5909
|triple point K=
|triple point kPa=
|critical point K=
|critical point MPa=
|heat fusion=50.21
|heat fusion 2=
|heat vaporization=383
|heat capacity=19.789
|vapor pressure 1=1908
|vapor pressure 10=2102
|vapor pressure 100=2339
|vapor pressure 1 k=2636
|vapor pressure 10 k=3021
|vapor pressure 100 k=3537
|vapor pressure comment=
|crystal structure=diamond cubic
|crystal structure Pearson symbol=cF8
|lattice constant=''a'' = 543.0986 pm (at 20 °C)<ref name="Arblaster 2018">{{cite book |last=Arblaster |first= John W. |title=Selected Values of the Crystallographic Properties of Elements |publisher=ASM International |publication-place=Materials Park, Ohio |date=2018 |isbn=978-1-62708-155-9}}</ref>
|electronegativity=1.90
|number of ionization energies=4
|ionization energy 1=786.5
|ionization energy 2=1577.1
|ionization energy 3=3231.6
|atomic radius=111
|atomic radius calculated=
|covalent radius=111
|Van der Waals radius=210
|magnetic ordering=[[Diamagnetism|diamagnetic]]
|magnetic ordering ref=<ref>[http://www-d0.fnal.gov/hardware/cal/lvps_info/engineering/elementmagn.pdf Magnetic susceptibility of the elements and inorganic compounds], in {{RubberBible86th}}</ref>
|electrical resistivity=
|electrical resistivity at 0=
|electrical resistivity at 20=2.3{{e|3}}
|electrical resistivity at 20 ref=<ref name="Eranna2014">{{cite book|author=Eranna, Golla |title=Crystal Growth and Evaluation of Silicon for VLSI and ULSI|url=https://books.google.com/books?id=bo6ZBQAAQBAJ&pg=PA7|date=2014|publisher=CRC Press|isbn=978-1-4822-3281-3|page=7}}</ref>
|thermal conductivity=149
|thermal conductivity 2=
|thermal diffusivity=
|thermal expansion=
|thermal expansion comment={{val|2.556|e=−6}}/K (at 20 °C)<ref name="Arblaster 2018" />
|thermal expansion at 25=
|speed of sound=
|speed of sound rod at 20=8433
|speed of sound rod at r.t.=
|magnetic susceptibility= {{val|−3.9|e=−6}}
|magnetic susceptibility ref= (298 K)<ref>{{Cite book|title=CRC, Handbook of Chemistry and Physics|last=Weast|first=Robert|publisher=Chemical Rubber Company Publishing|year=1984|isbn=0-8493-0464-4|location=Boca Raton, Florida|pages=E110}}</ref>
|Young's modulus=130–188
|Young's modulus ref=<ref name=hopcroft>{{cite journal
|doi=10.1109/JMEMS.2009.2039697|title=What is the Young's Modulus of Silicon?
|year=2010
|last1=Hopcroft|first1=Matthew A.|last2=Nix|first2=William D.|last3=Kenny|first3=Thomas W.
|journal=Journal of Microelectromechanical Systems|volume=19|issue=2|pages=229
|url=http://silicon.reddogresearch.com/}}</ref>
|Shear modulus=51–80
|Shear modulus ref=<ref name=hopcroft/>
|Bulk modulus=97.6
|Bulk modulus ref=<ref name=hopcroft/>
|Poisson ratio=0.064–0.28
|Poisson ratio ref=<ref name=hopcroft/>
|Mohs hardness=6.5
|Vickers hardness=
|Brinell hardness=
|CAS number=7440-21-3
|band gap=1.12
|predicted by=[[Antoine Lavoisier]]
|prediction date=1787
|discovery and first isolation by=[[Jöns Jacob Berzelius]]<ref>{{cite journal|title=The discovery of the elements: XII. Other elements isolated with the aid of potassium and sodium: beryllium, boron, silicon, and aluminum|last=Weeks|first=Mary Elvira|author-link=Mary Elvira Weeks|year=1932|journal=Journal of Chemical Education|volume=9|issue=8|pages=1386–1412|bibcode=1932JChEd...9.1386W |doi=10.1021/ed009p1386 }}</ref><ref>{{cite journal| year=2007| journal=Russian Journal of Applied Chemistry| doi=10.1134/S1070427207120397|title=Silicon era|last1=Voronkov|first1=M. G.|volume=80|page=2190| issue=12}}</ref>
|discovery date=1823
|naming=after Latin {{lang|la|silex}} or {{lang|la|silicis}}, meaning '[[flint]]'
|named by= [[Thomas Thomson (chemist)|Thomas Thomson]]
|named date=1817
|history comment label=
|history comment=
|QID=Q670
}}<noinclude>
{{Infobox element/element navigation|symbol=Si}}
{{Template reference list}}
Two of these are [[WP:REFNAME|named references]]. They may be cited in the containing article as
* <nowiki><ref name="Eranna2014" /></nowiki> for the source by Eranna
* <nowiki><ref name="hopcroft" /></nowiki> for the source by Hopcroft
{{documentation|1=Template:Infobox element/doc}}
[[Category:Templates that generate named references]]
</noinclude>

Template:Infobox silicon - Revision history

>MadeOfAtoms: Update density and thermal expansion